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"Gate leakage current suppression and reliability improvement for ultra-low ..."

Wei-Fong Chi et al. (2015)

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DOI: 10.1016/J.MICROREL.2015.08.015

access: closed

type: Journal Article

metadata version: 2020-02-22

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Wei-Fong Chi, Kuei-Shu Chang-Liao, Shih-Han Yi, Chen-Chien Li, Yan-Lin Li:
Gate leakage current suppression and reliability improvement for ultra-low EOT Ge MOS devices by suitable HfAlO/HfON thickness and sintering temperature. Microelectron. Reliab. 55(11): 2183-2187 (2015)

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