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"Effect of gate trench fabrication technology on reliability of AlGaN/GaN ..."

Sergey A. Chevtchenko et al. (2014)

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DOI: 10.1016/J.MICROREL.2014.07.046

access: closed

type: Journal Article

metadata version: 2020-02-22

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Sergey A. Chevtchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Joachim Würfl:
Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors. Microelectron. Reliab. 54(9-10): 2191-2195 (2014)

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