"Electrical reliability aspects of HfO2 high-k gate dielectrics ..."

S. Chatterjee et al. (2006)

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DOI: 10.1016/J.MICROREL.2005.02.004

access: closed

type: Journal Article

metadata version: 2020-02-22

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S. Chatterjee, Yue Kuo, J. Lu, J.-Y. Tewg, P. Majhi:
Electrical reliability aspects of HfO₂ high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress. Microelectron. Reliab. 46(1): 69-76 (2006)

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