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"3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs ..."

Yaxin Zhang et al. (2020)

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DOI: 10.1109/JSSC.2019.2959510

access: closed

type: Journal Article

metadata version: 2020-08-30

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Yaxin Zhang, Wenfeng Liang, Xiaodi Jin, Mario Krattenmacher, Sophia Falk, Paulius Sakalas, Bernd Heinemann, Michael Schröter:
3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation. IEEE J. Solid State Circuits 55(6): 1471-1481 (2020)

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