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- Chulbum Kim, Jinho Ryu, Tae-Sung Lee, Hyunggon Kim, Jaewoo Lim, Jaeyong Jeong, Seonghwan Seo, Hongsoo Jeon, Bokeun Kim, Inyoul Lee, Dooseop Lee, Pansuk Kwak, Seongsoon Cho, Yongsik Yim, Changhyun Cho, Woopyo Jeong, Kwang-Il Park, Jin-Man Han, Duheon Song, Kyehyun Kyung, Youngho Lim, Young-Hyun Jun:
A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface. IEEE J. Solid State Circuits 47(4): 981-989 (2012)
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