![](https://dblp1.uni-trier.de/img/logo.ua.320x120.png)
![](https://dblp1.uni-trier.de/img/dropdown.dark.16x16.png)
![](https://dblp1.uni-trier.de/img/peace.dark.16x16.png)
Остановите войну!
for scientists:
![search dblp search dblp](https://dblp1.uni-trier.de/img/search.dark.16x16.png)
![search dblp](https://dblp1.uni-trier.de/img/search.dark.16x16.png)
default search action
"A 256-Kb Dual-VCC SRAM Building Block in 65-nm CMOS Process ..."
Muhammad M. Khellah et al. (2007)
- Muhammad M. Khellah
, Dinesh Somasekhar, Yibin Ye, Nam-Sung Kim, Jason Howard, Gregory Ruhl, Murad Sunna, James W. Tschanz, Nitin Borkar, Fatih Hamzaoglu, Gunjan Pandya, Ali Farhang, Kevin Zhang, Vivek De:
A 256-Kb Dual-VCC SRAM Building Block in 65-nm CMOS Process With Actively Clamped Sleep Transistor. IEEE J. Solid State Circuits 42(1): 233-242 (2007)
![](https://dblp1.uni-trier.de/img/cog.dark.24x24.png)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.