default search action
"A FinFET SRAM cell design with BTI robustness at high supply voltages and ..."
Behzad Ebrahimi et al. (2015)
- Behzad Ebrahimi, Reza Asadpour, Ali Afzali-Kusha, Massoud Pedram:
A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages. Int. J. Circuit Theory Appl. 43(12): 2011-2024 (2015)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.