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"A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the ..."

Dondee Navarro et al. (2005)

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DOI: 10.1093/IETELE/E88-C.5.1079

access: closed

type: Journal Article

metadata version: 2020-04-11

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Dondee Navarro, Takeshi Mizoguchi, Masami Suetake, Kazuya Hisamitsu, Hiroaki Ueno, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Shigetaka Kumashiro, Tetsuya Yamaguchi, Kyoji Yamashita, Noriaki Nakayama:
A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential. IEICE Trans. Electron. 88-C(5): 1079-1086 (2005)

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