"A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the ..."

Dondee Navarro et al. (2005)

> Home

Details and statistics

DOI: 10.1093/IETELE/E88-C.5.1079

access: closed

type: Journal Article

metadata version: 2020-04-11

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/ieicet/NavarroMSHUMMKYYN05
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ieicet/NavarroMSHUMMKYYN05
Dondee Navarro, Takeshi Mizoguchi, Masami Suetake, Kazuya Hisamitsu, Hiroaki Ueno, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Shigetaka Kumashiro, Tetsuya Yamaguchi, Kyoji Yamashita, Noriaki Nakayama:
A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential. IEICE Trans. Electron. 88-C(5): 1079-1086 (2005)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.