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"Failure Probability due to Radiation-Induced Effects in FinFET SRAM Cells ..."

Víctor H. Champac et al. (2024)

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DOI: 10.1007/S10836-024-06102-0

access: closed

type: Journal Article

metadata version: 2024-05-16

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Víctor H. Champac, Hector Villacorta, Roberto Gómez-Fuentes, Fabian Vargas, Jaume Segura:
Failure Probability due to Radiation-Induced Effects in FinFET SRAM Cells under Process Variations. J. Electron. Test. 40(1): 75-86 (2024)

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