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"A New Behavioral Model of Gate-Grounded NMOS for Simulating Snapback ..."

Yize Wang, Guangyi Lu, Yuan Wang (2020)

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DOI: 10.1109/ACCESS.2020.2972042

access: open

type: Journal Article

metadata version: 2020-05-22

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Yize Wang, Guangyi Lu, Yuan Wang:
A New Behavioral Model of Gate-Grounded NMOS for Simulating Snapback Characteristics. IEEE Access 8: 64730-64738 (2020)

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