"On the role of holes in oxide breakdown mechanism in inverted nMOSFETs."

Frederic Monsieur et al. (2003)

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DOI: 10.1016/S0026-2714(03)00172-0

access: closed

type: Journal Article

metadata version: 2023-06-26

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Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo:
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectron. Reliab. 43(8): 1199-1202 (2003)

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