"Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device ..."

H. J. Hung et al. (2010)

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DOI: 10.1016/J.MICROREL.2010.01.015

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type: Journal Article

metadata version: 2022-06-09

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H. J. Hung, James B. Kuo, D. Chen, Chih-Sheng Yeh:
Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect. Microelectron. Reliab. 50(5): 607-609 (2010)

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