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"Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric ..."

C.-Y. Liao et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830345

access: closed

type: Conference or Workshop Paper

metadata version: 2023-11-12

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  - conf/vlsit/LiaoHLTLLHWCRTC22
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  - https://dblp.org/rec/conf/vlsit/LiaoHLTLLHWCRTC22
C.-Y. Liao, K.-Y. Hsiang, Z.-F. Lou, H.-C. Tseng, C.-Y. Lin, Z.-X. Li, F.-C. Hsieh, C. C. Wang, F.-S. Chang, W.-C. Ray, Y.-Y. Tseng, Shu-Tong Chang, T. C. Chen, Min-Hung Lee:
Endurance > 10¹¹ Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM. VLSI Technology and Circuits 2022: 1-2

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