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"RaM-SAR: A Low Energy and Area Overhead, 11.3fJ/conv.-step 12b 25MS/s ..."

Ruicong Chen et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830365

access: closed

type: Conference or Workshop Paper

metadata version: 2022-08-04

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Ruicong Chen, Hanrui Wang, Anantha P. Chandrakasan, Hae-Seung Lee:
RaM-SAR: A Low Energy and Area Overhead, 11.3fJ/conv.-step 12b 25MS/s Secure Random-Mapping SAR ADC with Power and EM Side-channel Attack Resilience. VLSI Technology and Circuits 2022: 94-95

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