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"A 64Mb SRAM in 22nm SOI technology featuring fine-granularity power gating ..."

Harold Pilo et al. (2013)

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DOI: 10.1109/ISSCC.2013.6487753

access: closed

type: Conference or Workshop Paper

metadata version: 2021-10-10

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Harold Pilo, Chad A. Adams, Igor Arsovski, Robert M. Houle, Steve Lamphier, Michael M. Lee, Frank Pavlik, Sushma N. Sambatur, Adnan Seferagic, Richard Wu, Mohammad Imran Younus:
A 64Mb SRAM in 22nm SOI technology featuring fine-granularity power gating and low-energy power-supply-partition techniques for 37% leakage reduction. ISSCC 2013: 322-323

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