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"A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with ..."

Dongku Kang et al. (2019)

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DOI: 10.1109/ISSCC.2019.8662493

access: closed

type: Conference or Workshop Paper

metadata version: 2021-08-06

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  dblp key:
  - conf/isscc/KangKJJPCSKKKLK19
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  persistent URL:
  - https://dblp.org/rec/conf/isscc/KangKJJPCSKKKLK19
Dongku Kang, Minsu Kim, Suchang Jeon, Wontaeck Jung, Jooyong Park, Gyo Soo Choo, Dong-Kyo Shim, Anil Kavala, Seungbum Kim, Kyung-Min Kang, Jiyoung Lee, Kuihan Ko, Hyun Wook Park, ByungJun Min, Changyeon Yu, Sewon Yun, Nahyun Kim, Yeonwook Jung, Sungwhan Seo, Sunghoon Kim, Moo Kyung Lee, Joo-Yong Park, James C. Kim, Young San Cha, Kwangwon Kim, Youngmin Jo, Hyun-Jin Kim, Youngdon Choi, Jindo Byun, Ji-hyun Park, Kiwon Kim, Tae-Hong Kwon, Young-Sun Min, Chiweon Yoon, Youngcho Kim, Dong-Hun Kwak, Eungsuk Lee, Wook-Ghee Hahn, Ki-Sung Kim, Kyungmin Kim, Euisang Yoon, Wontae Kim, Inryul Lee, Seunghyun Moon, Jeong-Don Ihm, Dae-Seok Byeon, Ki-Whan Song, Sangjoon Hwang, Kyehyun Kyung:
A 512Gb 3-bit/Cell 3D 6^th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface. ISSCC 2019: 216-218

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