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"12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with ..."

Jonathan Chang et al. (2017)

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DOI: 10.1109/ISSCC.2017.7870333

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-17

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  - conf/isscc/ChangCCSCFLLHLL17
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Jonathan Chang, Yen-Huei Chen, Wei-Min Chan, Sahil Preet Singh, Hank Cheng, Hidehiro Fujiwara, Jih-Yu Lin, Kao-Cheng Lin, John Hung, Robin Lee, Hung-Jen Liao, Jhon-Jhy Liaw, Quincy Li, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu:
12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. ISSCC 2017: 206-207

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