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"Sub-1V, Robust and Compact 6T SRAM cell in Double Gate MOS technology."

Olivier Thomas, Marina Reyboz, Marc Belleville (2007)

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DOI: 10.1109/ISCAS.2007.378629

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-26

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Olivier Thomas, Marina Reyboz, Marc Belleville:
Sub-1V, Robust and Compact 6T SRAM cell in Double Gate MOS technology. ISCAS 2007: 2778-2781

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