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"A high temperature variable gain amplifier based on GaN HEMT devices for ..."

Mohammed Ehteshamuddin, Jebreel M. Salem, Dong Sam Ha (2017)

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DOI: 10.1109/ISCAS.2017.8050376

access: closed

type: Conference or Workshop Paper

metadata version: 2021-02-19

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Mohammed Ehteshamuddin, Jebreel M. Salem, Dong Sam Ha:
A high temperature variable gain amplifier based on GaN HEMT devices for downhole communications. ISCAS 2017: 1-4

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