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"Hot carrier induced TDDB in HV MOS: Lifetime model and extrapolation to ..."

Guido T. Sasse (2018)

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DOI: 10.1109/IRPS.2018.8353698

access: closed

type: Conference or Workshop Paper

metadata version: 2019-01-22

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Guido T. Sasse:
Hot carrier induced TDDB in HV MOS: Lifetime model and extrapolation to use conditions. IRPS 2018: 3-1

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