"A World First QLC RRAM: Highly Reliable Resistive-Gate Flash with Record ..."

M. Y. Li et al. (2023)

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DOI: 10.1109/IRPS48203.2023.10117748

access: closed

type: Conference or Workshop Paper

metadata version: 2023-05-24

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M. Y. Li, J. P. Lee, C. H. Liu, J. C. Guo, Steve S. Chung:
A World First QLC RRAM: Highly Reliable Resistive-Gate Flash with Record 10⁸ Endurance and Excellent Retention. IRPS 2023: 1-7

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