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"The influence of the gate trench orientation to the crystal plane on the ..."

Eldad Bahat-Treidel et al. (2020)

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DOI: 10.1109/DRC50226.2020.9135182

access: closed

type: Conference or Workshop Paper

metadata version: 2023-03-05

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  - conf/drc/TreidelHCKGLW20
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Eldad Bahat-Treidel, Oliver Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, Joachim Würfl:
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications. DRC 2020: 1-2

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