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Ali Khaki-Firooz
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2020 – today
- 2023
- [c8]Ali Khakifirooz, Eduardo Anaya, Sriram Balasubrahrmanyam, Geoff Bennett, Daniel Castro, John Egler, Kuangchan Fan, Rifat Ferdous, Kartik Ganapathi, Omar Guzman, Chang-Wan Ha, Rezaul Haque, Vinaya Harish, Majid Jalalifar, Owen Jungroth, Sung-Taeg Kang, Golnaz Karbasian, Jee-Yeon Kim, Siyue Li, Aliasgar S. Madraswala, Srivijay Maddukuri, Amr Mohammed, Shanmathi Mookiah, Shashi Nagabhushan, Binh Ngo, Deep Patel, Sai Kumar Poosarla, Naveen Prabhu V, Carlos Quiroga, Shantanu Rajwade, Ahsanur Rahman, Jalpa Shah, Rohit S. Shenoy, Ebenezer Tachie-Menson, Archana Tankasala, Sandeep Krishna Thirumala, Sagar Upadhyay, Krishnasree Upadhyayula, Ashley Velasco, Nanda Kishore Babu Vemula, Bhaskar Venkataramaiah, Jiantao Zhou, Bharat Pathak, Pranav Kalavade:
A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3Gb/mm2 Bit Density. ISSCC 2023: 400-401 - 2021
- [c7]Ali Khakifirooz, Sriram Balasubrahmanyam, Richard Fastow, Kristopher H. Gaewsky, Chang-Wan Ha, Rezaul Haque, Owen Jungroth, Steven Law, Aliasgar S. Madraswala, Binh Ngo, Naveen Prabhu V, Shantanu Rajwade, Karthikeyan Ramamurthi, Rohit S. Shenoy, Jacqueline Snyder, Cindy Sun, Deepak Thimmegowda, Bharat Pathak, Pranav Kalavade:
A 1Tb 4b/Cell 144-Tier Floating-Gate 3D-NAND Flash Memory with 40MB/s Program Throughput and 13.8Gb/mm2 Bit Density. ISSCC 2021: 424-426
2010 – 2019
- 2016
- [j3]Kangguo Cheng, Ali Khaki-Firooz:
Fully depleted SOI (FDSOI) technology. Sci. China Inf. Sci. 59(6): 061402:1-061402:15 (2016) - 2012
- [c6]Ali Khaki-Firooz, Kangguo Cheng, Qing Liu, Toshiharu Nagumo, Nicolas Loubet, Alexander Reznicek, James Kuss, J. Gimbert, Raghavasimhan Sreenivasan, Maud Vinet, Laurent Grenouillet, Yannick Le Tiec, Romain Wacquez, Z. Ren, J. Cai, Davood Shahrjerdi, Prasanna Kulkarni, Shom Ponoth, Scott Luning, Bruce Doris:
Extremely thin SOI for system-on-chip applications. CICC 2012: 1-4 - 2010
- [c5]Ali Khaki-Firooz, Kangguo Cheng, Basanth Jagannathan, Pranita Kulkarni, Jeffrey W. Sleight, Davood Shahrjerdi, Josephine B. Chang, Sungjae Lee, Junjun Li, Huiming Bu, Robert Gauthier, Bruce Doris, Ghavam G. Shahidi:
Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond. ISSCC 2010: 152-153
2000 – 2009
- 2008
- [b1]Ali Khaki-Firooz:
Transport enhancement techniques for nanoscale MOSFETs. Massachusetts Institute of Technology, Cambridge, MA, USA, 2008 - 2006
- [j2]Dimitri A. Antoniadis, Ingvar Åberg, Cáit Ní Chléirigh, Osama M. Nayfeh, Ali Khaki-Firooz, Judy L. Hoyt:
Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations. IBM J. Res. Dev. 50(4-5): 363-376 (2006) - [c4]Hadi Parandeh-Afshar, Ali Afzali-Kusha, Ali Khaki-Firooz:
A very high performance address BUS encoder. ISCAS 2006 - [c3]Mohammad Riazati, Ashkan Sobhani, M. Mottaghi-Dastjerdi, Ali Afzali-Kusha, Ali Khaki-Firooz:
Low-power multiplier with static decision for input manipulation. ISCAS 2006 - 2005
- [j1]Davood Shahrjerdi, Bahman Hekmatshoar, Ali Khaki-Firooz, Ali Afzali-Kusha:
Optimization of the VT control method for low-power ultra-thin double-gate SOI logic circuits. Integr. 38(3): 505-513 (2005) - 2004
- [c2]Amir Amirabadi, Javid Jaffari, Ali Afzali-Kusha, Mehrdad Nourani, Ali Khaki-Firooz:
Leakage current reduction by new technique in standby mode. ACM Great Lakes Symposium on VLSI 2004: 158-161 - 2000
- [c1]Faramarz Bahmani, Seid Mehdi Fakhraie, Ali Khakifirooz:
A rail-to-rail, constant-Gm, 1-volt CMOS opamp. ISCAS 2000: 669-672
Coauthor Index
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