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2010 – 2019
- 2012
[j1]Hyun-Woo Lee, Ki-Han Kim, Young-Kyoung Choi, Ju-Hwan Sohn, Nak-Kyu Park, Kwan-Weon Kim, Chulwoo Kim, Young-Jung Choi, Byong-Tae Chung:
A 1.6 V 1.4 Gbp/s/pin Consumer DRAM With Self-Dynamic Voltage Scaling Technique in 44 nm CMOS Technology. IEEE J. Solid State Circuits 47(1): 131-140 (2012)- 2011
- [c4]Hyun-Woo Lee, Ki-Han Kim, Young-Kyoung Choi, Ju-Hwan Shon, Nak-Kyu Park, Kwan-Weon Kim, Chulwoo Kim, Young-Jung Choi, Byong-Tae Chung:
A 1.6V 1.4Gb/s/pin consumer DRAM with self-dynamic voltage-scaling technique in 44nm CMOS technology. ISSCC 2011: 502-504
2000 – 2009
- 2009
- [c3]Hyun-Woo Lee, Won-Joo Yun, Young-Kyoung Choi, Hyang-Hwa Choi, Jong-Jin Lee, Ki-Han Kim, Shin-Deok Kang, Ji-Yeon Yang, Jae-Suck Kang, Hyeng-Ouk Lee, Dong-Uk Lee, Sujeong Sim, Young-Ju Kim, Won-Jun Choi, Keun-Soo Song, Sang-Hoon Shin, Hyung-Wook Moon, Seung-Wook Kwack, Jung-Woo Lee, Nak-Kyu Park, Kwan-Weon Kim, Young-Jung Choi, Jin-Hong Ahn, Byong-Tae Chung:
A 1.6V 3.3Gb/s GDDR3 DRAM with dual-mode phase- and delay-locked loop using power-noise management with unregulated power supply in 54nm CMOS. ISSCC 2009: 140-141 - 2008
- [c2]Dong-Uk Lee, Shin-Deok Kang, Nak-Kyu Park, Hyun-Woo Lee, Young-Kyoung Choi, Jung-Woo Lee, Seung-Wook Kwack, Hyeong-Ouk Lee, Won-Joo Yun, Sang-Hoon Shin, Kwan-Weon Kim, Young-Jung Choi, Ye Seok Yang:
Multi-Slew-Rate Output Driver and Optimized Impedance-Calibration Circuit for 66nm 3.0Gb/s/pin DRAM Interface. ISSCC 2008: 280-281 - [c1]Won-Joo Yun, Hyun-Woo Lee, Dongsuk Shin, Shin-Deok Kang, Ji-Yeon Yang, Hyeng-Ouk Lee, Dong-Uk Lee, Sujeong Sim, Young-Ju Kim, Won-Jun Choi, Keun-Soo Song, Sang-Hoon Shin, Hyang-Hwa Choi, Hyung-Wook Moon, Seung-Wook Kwack, Jung-Woo Lee, Young-Kyoung Choi, Nak-Kyu Park, Kwan-Weon Kim, Young-Jung Choi, Jin-Hong Ahn, Ye Seok Yang:
A 0.1-to-1.5GHz 4.2mW All-Digital DLL with Dual Duty-Cycle Correction Circuit and Update Gear Circuit for DRAM in 66nm CMOS Technology. ISSCC 2008: 282-283
Coauthor Index
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