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ORCIDMassimo V. Fischetti
Person information
- affiliation: University of Texas at Dallas, Department of Materials Science and Engineering, Richardson, TX, USA
- affiliation: University of Massachusetts Amherst, Department of Electrical and Computer Engineering, MA, USA
- affiliation: IBM T. J. Watson Research Center, Yorktown Heights, NY, USA
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Journal Articles
- 2019
[j8]Maarten L. Van De Put
, Massimo V. Fischetti, William G. Vandenberghe:
Scalable atomistic simulations of quantum electron transport using empirical pseudopotentials. Comput. Phys. Commun. 244: 156-169 (2019)- 2012
- [j7]Jiseok Kim, Siddarth A. Krishnan, Sudarshan Narayanan, Michael P. Chudzik, Massimo V. Fischetti:
Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs. Microelectron. Reliab. 52(12): 2907-2913 (2012) - 2006
- [j6]Wilfried Haensch, Edward J. Nowak, Robert H. Dennard, Paul M. Solomon, Andres Bryant, Omer H. Dokumaci, Arvind Kumar, Xinlin Wang, Jeffrey B. Johnson, Massimo V. Fischetti:
Silicon CMOS devices beyond scaling. IBM J. Res. Dev. 50(4-5): 339-362 (2006) - 2005
- [j5]Santhosh Krishnan, Dragica Vasileska, Massimo V. Fischetti:
Hole transport in p-channel Si MOSFETs. Microelectron. J. 36(3-6): 323-326 (2005) - 2001
- [j4]James C. Tsang, Massimo V. Fischetti:
Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies. Microelectron. Reliab. 41(9-10): 1465-1470 (2001) - 1998
- [j3]Orazio Muscato, Rosa M. Pidatella, Massimo V. Fischetti:
Monte Carlo and hydrodynamic simulation of a one dimensional n+ - n - n+ silicon diode. VLSI Design 6(1-4): 247-250 (1998) - [j2]Massimo V. Fischetti:
Theory of Electron Transport in Small Semiconductor Devices Using the Pauli Master Equation. VLSI Design 8(1-4): 173-178 (1998) - 1992
- [j1]Wai Lee, Steven E. Laux, Massimo V. Fischetti, Giorgio Baccarani, Antonio Gnudi, Johannes M. C. (Hans) Stork, Jack A. Mandelman, Emmanuel F. Crabbé, Matthew R. Wordeman, Farouk Odeh:
Numerical modeling of advanced semiconductor devices. IBM J. Res. Dev. 36(2): 208-232 (1992)
Conference and Workshop Papers
- 2019
- [c3]Mohammad Mahdi Khatami, Gautam Gaddemane, Maarten L. Van De Put, Massimo V. Fischetti, Mohammad Kazem Moravvej-Farshi, Mahdi Pourfath, William G. Vandenberghe:
First-principles Study of the Electron and Hole Mobility in Silicane. DRC 2019: 127-128 - 2018
- [c2]Akash A. Laturia, Maarten L. Van De Put, Massimo V. Fischetti, William G. Vandenberghe:
Modeling of electron transport in nanoribbon devices using Bloch waves. DRC 2018: 1-2 - 2006
- [c1]Dragica Vasileska, Santhosh Krishnan, Massimo V. Fischetti:
Examining Performance Enhancement of p-Channel Strained-SiGe MOSFET Devices. Numerical Methods and Applications 2006: 189-196
Coauthor Index
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