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ORCIDP. Srinivasan 0002
Person information
- affiliation: Globalfoundries Inc., Malta, NY, USA
- affiliation (former): New Jersey Institute of Technology, Newark, NJ, USA
Other persons with the same name
- P. Srinivasan — disambiguation page
- P. Srinivasan 0001 — Graz University of Technology, Austria
- P. Srinivasan 0003 (aka: Srinivasan P 0003) — National Institute of Technology, Department of Physics, Silchar, Assam, India
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Journal Articles
- 2017
[j3]Shimpei Yamaguchi
, Zeynel Bayindir, Xiaoli He, Suresh Uppal, Purushothaman Srinivasan, Chloe Yong, Dongil Choi, Manoj Joshi, Hyuck Soo Yang, Owen Hu, Srikanth Samavedam, Dong Kyun Sohn:
Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices. Microelectron. Reliab. 72: 80-84 (2017)- 2012
- [j2]Gilson I. Wirth, Dragica Vasileska, N. Ashraf, Lucas Brusamarello, R. Della Giustina, P. Srinivasan:
Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants. Microelectron. Reliab. 52(12): 2955-2961 (2012) - 2010
- [j1]Purushothaman Srinivasan:
Tool wear monitoring using artificial neural network based on extended Kalman filter weight updation with transformed input patterns. J. Intell. Manuf. 21(6): 717-730 (2010)
Conference and Workshop Papers
- 2023
- [c22]Dora A. Chaparro-Ortiz, Alan Y. Otero-Carrascal, Edmundo A. Gutiérrez-D., Reydezel Torres-Torres, Oscar Huerta-Guevara, P. Srinivasan, Fernando Guarin:
Impact of Non-Conducting HCI Degradation on Small-Signal Parameters in RF SOI MOSFET. IRPS 2023: 1-6 - [c21]Aarti Rathi, Abhisek Dixit, Naga Satish, P. Srinivasan, Fernando Guarin:
Reliability of SPST Series-stacked SOI CMOS RF Switches for mmWave Applications. IRPS 2023: 1-6 - [c20]P. Srinivasan, J. Lestage, Shafi Syed, X. Hui, Stephen Moss, Oscar D. Restrepo, Oscar H. Gonzalez, Y. Chen, T. McKay, Anirban Bandyopadhyay, Ned Cahoon, Fernando Guarin, Byoung Min, Martin Gall, S. Ludvik:
RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications. IRPS 2023: 1-6 - 2022
- [c19]Aarti Rathi, Abhisek Dixit, P. Srinivasan, Oscar Huerta-Gonzalez, Fernando Guarin:
RF Reliability of CMOS-Based Power Amplifier Cell for 5G mmWave Applications. IRPS 2022: 4 - [c18]P. Srinivasan, Fernando Guarin, Enkhbayasgalan Gantsog, Harish Krishnaswamy, Arun Natarajan:
Excellent RF Product HTOL reliability of 5G mmWave beamformer chip fabricated using GF 45RFSOI technologies. IRPS 2022: 4 - [c17]M. Hauser, P. Srinivasan, A. Vallett, R. Krishnasamy, Fernando Guarin, Dave Brochu, V. Pham, Byoung Min:
Parasitic Drain Series Resistance Effects on Non-conducting Hot Carrier Reliability. IRPS 2022: 5 - [c16]Asifa Amin, Aarti Rathi, Sujit K. Singh, Abhisek Dixit, Oscar Huerta-Gonzalez, P. Srinivasan, Fernando Guarin:
Deep Cryogenic Temperature TDDB in 45-nm PDSOI N-channel FETs for Quantum Computing Applications. IRPS 2022: 11 - [c15]Ned Cahoon, P. Srinivasan, Fernando Guarin:
6G Roadmap for Semiconductor Technologies: Challenges and Advances. IRPS 2022: 11 - [c14]Salvatore Cimino, J. Singh, J. B. Johnson, W. Zheng, Y. Chen, W. Liu, P. Srinivasan, O. Gonzales, M. Hauser, Matthew Koskinen, K. Nagahiro, Y. Liu, B. Min, Tanya Nigam, N. Squib:
Optimized LDMOS Offering for Power Management and RF Applications. IRPS 2022: 57-1 - 2021
- [c13]Sameer H. Jain, Dimitri Lederer, Arvind Kumar, Sudesh Saroop, Chris Prindle, P. Srinivasan, Wen Liu, Ravi Achanta, Erdem Kaltalioglu, Stephen Moss, Greg Freeman, Paul Colestock:
Novel mmWave NMOS Device for High Pout mmWave Power Amplifiers in 45RFSOI. ESSDERC 2021: 199-202 - [c12]Aarti Rathi, P. Srinivasan, Fernando Guarin, Abhisek Dixit:
Large Signal RF Reliability of 45-nm RFSOI Power Amplifier Cell for Wi-Fi6 Applications. IRPS 2021: 1-6 - [c11]P. Srinivasan, Fernando Guarin:
CMOS RF reliability for 5G mmWave applications - Challenges and Opportunities. IRPS 2021: 1-7 - [c10]P. Srinivasan, Fernando Guarin, Shafi Syed, Joris Angelo Sundaram Jerome, Wen Liu, Sameer H. Jain, Dimitri Lederer, Stephen Moss, Paul Colestock, Anirban Bandyopadhyay, Ned Cahoon, Byoung Min, Martin Gall:
RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications. IRPS 2021: 1-6 - [c9]P. Srinivasan, Da Song, David Rose, Maurice LaCroix, Arunima Dasgupta:
Back gate bias effect and layout dependence on Random Telegraph Noise in FDSOI technologies. IRPS 2021: 1-4 - 2020
- [c8]Paul Colestock, P. Srinivasan, Fernando Guarin:
Silicon Based RF Reliability Challenges for 5G Communications. IRPS 2020: 1-4 - [c7]P. Srinivasan, Paul Colestock, Thomas Samuels, Stephen Moss, Fernando Guarin, Byoung Min:
A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mmWave applications. IRPS 2020: 1-4 - 2019
- [c6]M. Iqbal Mahmud, Amit Gupta, Maria Toledano-Luque, N. Rao Mavilla, J. Johnson, P. Srinivasan, A. Zainuddin, S. Rao, Salvatore Cimino, Byoung Min, Tanya Nigam:
Hot Carrier Reliability Improvement of Thicker Gate Oxide nFET Devices in Advanced FinFETs. IRPS 2019: 1-6 - [c5]Tian Shen, Abu Naser Zainuddin, Purushothaman Srinivasan, Zakariae Chbili, Kai Zhao, Patrick Justison:
Novel Oxide Top-Off Process Enabling Reliable PC-CA TDDB on IO Devices with Self Aligned Contact. IRPS 2019: 1-5 - 2013
- [c4]Dalton M. Colombo, Gilson I. Wirth, Sergio Bampi, P. Srinivasan:
Voltage reference design using 1 V power supply in 0.13 µm CMOS technology. LASCAS 2013: 1-4 - 2011
- [c3]Purushothaman Srinivasan:
Noise and reliability in advanced CMOS devices for low power applications. SBCCI 2011: 228 - 2009
- [c2]P. Srinivasan, Andrew Marshall:
Correlating op-amp circuit noise with device flicker (1/f) noise for analog design applications. SoCC 2009: 191-194 - 2004
- [c1]P. Srinivasan, B. Vootukuru, Durga Misra:
Screening of Hot Electron Effect During Plasma Processing. VLSI Design 2004: 291-
Coauthor Index
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