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ORCIDErfan Abbasian
Person information
- affiliation: Babol Noshirvani University of Technology, Iran
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Journal Articles
- 2023
[j13]Erfan Abbasian
, Bahare Grailoo, Mahdieh Nayeri:
Design of a 10-nm FinFET 11 T Near-Threshold SRAM Cell for Low-Energy Internet-of-Things Applications. Circuits Syst. Signal Process. 42(5): 3138-3151 (2023)- [j12]Erfan Abbasian, Maedeh Orouji, Sana Taghipour Anvari, Alireza Asadi, Ehsan Mahmoodi:
An ultra-low power and energy-efficient ternary Half-Adder based on unary operators and two ternary 3:1 multiplexers in 32-nm GNRFET technology. Int. J. Circuit Theory Appl. 51(10): 4969-4983 (2023) - [j11]Erfan Abbasian, Sobhan Sofimowloodi:
Energy-Efficient Single-Ended Read/Write 10T Near-Threshold SRAM. IEEE Trans. Circuits Syst. I Regul. Pap. 70(5): 2037-2047 (2023) - 2022
- [j10]Erfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil Zaidi:
A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology. Circuits Syst. Signal Process. 41(6): 3081-3105 (2022) - [j9]Erfan Abbasian, Morteza Gholipour:
Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications. Circuits Syst. Signal Process. 41(10): 5914-5932 (2022) - [j8]Erfan Abbasian, Morteza Gholipour:
A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications. Int. J. Circuit Theory Appl. 50(5): 1537-1556 (2022) - [j7]Erfan Abbasian, Morteza Gholipour:
Improved read/write assist mechanism for 10-transistor static random access memory cell. Int. J. Circuit Theory Appl. 50(10): 3642-3660 (2022) - [j6]Erfan Abbasian, Shilpi Birla, Emad Mojaveri Moslem:
Design and investigation of stability- and power-improved 11T SRAM cell for low-power devices. Int. J. Circuit Theory Appl. 50(11): 3827-3845 (2022) - [j5]Erfan Abbasian, Shilpi Birla, Morteza Gholipour:
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM. Microelectron. J. 123: 105427 (2022) - [j4]Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour:
A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins. IEEE Trans. Circuits Syst. I Regul. Pap. 69(4): 1606-1616 (2022) - [j3]Erfan Abbasian:
A Highly Stable Low-Energy 10T SRAM for Near-Threshold Operation. IEEE Trans. Circuits Syst. I Regul. Pap. 69(12): 5195-5205 (2022) - 2021
- [j2]Erfan Abbasian, Morteza Gholipour:
Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications. Int. J. Circuit Theory Appl. 49(4): 970-989 (2021) - [j1]Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab:
Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design. Int. J. Circuit Theory Appl. 49(11): 3630-3652 (2021)
Coauthor Index
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