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Kanyu Cao
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2020 – today
- 2024
- [c10]Da Wang
, Yongkang Xue, Yong Liu, Pengpeng Ren, Zixuan Sun, Zirui Wang, Yueyang Liu, Zhijun Cheng, Haiyang Yang, Xiangli Liu, Blacksmith Wu, Kanyu Cao, Runsheng Wang, Zhigang Ji, Ru Huang:
Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification. IRPS 2024: 9 - 2023
- [c9]Z. Asher Bai, Yixian Wang, Lixue Liu, Xi Zhang
, Feng Yuan, Junsheng Meng, Zhongming Liu, Js Jeon, James Cho, Blacksmith Wu, Huihui Li, Guilei Wang, Chao Zhao, Kanyu Cao:
Dielectric Relaxation Performance of DRAM Storage Capacitors and Ways of Improvement. IMW 2023: 1-4 - [c8]Longda Zhou
, Jie Li, Zheng Qiao, Pengpeng Ren, Zixuan Sun, Jianping Wang, Blacksmith Wu, Zhigang Ji, Runsheng Wang, Kanyu Cao, Ru Huang:
Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation. IRPS 2023: 1-10 - 2021
- [c7]Yanwu Du, Chris Eom, Jake Jung, Brian Lee, Edwin Kim, Kanyu Cao:
Adaptive OCD and ODT Control for Channel S/I Enhancement in DDR4 SDRAM. ASICON 2021: 1-3 - [c6]Yinchuan Gu, Chris Eom, Jake Jung, Brian Lee, Edwin Kim, Kanyu Cao:
A 2-stage with 3-stack 1-tap DFE Sense Amplifier based on Dual Reference for High Speed & Low Power DRAM Interface. ASICON 2021: 1-4 - [c5]Siman Li, Chris Eom, Jake Jung, Brian Lee, Edwin Kim, Kanyu Cao:
Adaptive DLL Update Scheme for Power Fluctuation Immunity Using Phase Error Detector. ASICON 2021: 1-4 - [c4]Xiong Li, Huangxia Zhu, Xiaolin Guo, Kejun Mu, Peng Feng, Qi-An Xu, Blacksmith Wu, Kanyu Cao:
Impact of Hydrogen Anneal on Peripheral PMOS NBTI and Array Transistor GIDL in DRAM. ASICON 2021: 1-4 - [c3]Yanzhe Tang, Zhongming Liu, Weibing Shang, Fengqin Zhang, Bernard Wu, Zhong Kong, Hongwen Li, Hong Ma, Kanyu Cao:
Pitch Device Design in 10nm-Class DRAM Process through DTCO. ASICON 2021: 1-4
2010 – 2019
- 2019
- [c2]Ning Li, Wen-Yang Jiang, Blacksmith Wu, Kanyu Cao:
Improve DRAM Leakage Issue During RAS Operational Phase Through TCAD Simulation. ASICON 2019: 1-4 - [c1]Jingrui Ma
, Qi-An Xu, Blacksmith Wu, Kanyu Cao:
Improved Model for ESD Failure Caused by Stressing No Connect Pin. ASICON 2019: 1-4
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last updated on 2024-08-05 21:18 CEST by the dblp team
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