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Johanna Mueting

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Journal Articles

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2017
[j1]
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Bhagyalakshmi Kakarla, Selamnesh Nida, Johanna Mueting, Thomas Ziemann, Ivana Kovacevic-Badstuebner, Ulrike Grossner:
Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs. Microelectron. Reliab. 76-77: 267-271 (2017)

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