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Qing-Qing Sun
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2020 – today
- 2023
- [j3]Heng Xu, Jun Wang, Hang Xu, Yi Gu, Hao Zhu, Qing-Qing Sun, David Wei Zhang:
Impact Study of Layout-Dependent Effects Toward FinFET Combinational Standard Cell Optimization. IEEE Trans. Circuits Syst. II Express Briefs 70(2): 731-735 (2023) - 2022
- [j2]Jun Wang, Haozhou Zhu
, Yang Yu
, Xu Liu, Eryuan Feng, Chuanzhen Lei, Yanfei Cai, Hao Zhu
, Qing-Qing Sun
, David Wei Zhang:
A Transistor-Level DFF Based on FinFET Technology for Low Power Integrated Circuits. IEEE Trans. Circuits Syst. II Express Briefs 69(2): 584-588 (2022) - [c8]Yuqing Fang, Qingxuan Li, Tianyu Wang, Jialin Meng, Qing-Qing Sun, David Wei Zhang, Lin Chen:
Photon-Memristive Device for Neuromorphic Computing. ICTA 2022: 50-51 - 2021
- [c7]Hang Xu, Dong-Hui Zhao, Hao Zhu, Qing-Qing Sun, David Wei Zhang:
A process optimization method for carrier stored trench bipolar transistor (CSTBT) device. ASICON 2021: 1-4 - 2020
- [j1]Chuan-Long Wang, Qing-Qing Sun, Qian-Ying Shen:
Low-rank and sparse matrix recovery via inexact Newton-like method with non-monotone search. Appl. Math. Lett. 106: 106357 (2020) - [c6]Yang Wang, Chen Wang, Tao Chen, Hao Liu, Chinte Kuo, Ke Zhou, Binfeng Yin, Lin Chen, Qing-Qing Sun:
Front-plane and Back-plane Bias Temperature Instability of 22 nm Gate-last FDSOI MOSFETs. IRPS 2020: 1-5
2010 – 2019
- 2017
- [c5]Liang Zheng, Lin-Jie Yu, Lin Chen, Qing-Qing Sun, Wei Huang, Hao Zhu, David Wei Zhang:
Vertical power diodes based on bulk GaN substrates. ASICON 2017: 163-166 - [c4]Tian-Yu Wang, Lin-Jie Yu, Lin Chen, Hao Liu, Hao Zhu, Qing-Qing Sun, Shi-Jin Ding, Peng Zhou, David Wei Zhang:
Atomic layer deposited Hf0.5Zr0.5O2-based flexible RRAM. ASICON 2017: 203-206 - [c3]Lin-Jie Yu, Tian-Yu Wang, Lin Chen, Hao Zhu, Qing-Qing Sun, Shi-Jin Ding, Peng Zhou, David Wei Zhang:
Graphite planar resistive switching memory and its application in pattern recognition. ASICON 2017: 343-346 - 2015
- [c2]C. Qian, Mao-Lin Shi, Lin Chen, Qing-Qing Sun, Peng Zhou, S. J. Ding, D. W. Zhang:
Investigation of self-heating effect in SOI tunnel field-effect transistor. ASICON 2015: 1-4 - 2013
- [c1]Chun-Min Zhang, Qing-Qing Sun, Peng-Fei Wang, David Wei Zhang:
PEALD Ru/RuOx films for ULSI applications and its transition control between metal and metal oxide. ASICON 2013: 1-4
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