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Holger Rücker
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Journal Articles
- 2022
- [j6]Thomas Bücher
, Janusz Grzyb
, Philipp Hillger
, Holger Rücker
, Bernd Heinemann
, Ullrich R. Pfeiffer
:
A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications. IEEE J. Solid State Circuits 57(7): 2024-2034 (2022) - 2017
- [j5]Pascal Chevalier
, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Böck, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, Christoph Jungemann
, Rickard Lovblom, Cristell Maneux
, Olivier Ostinelli
, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer:
Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proc. IEEE 105(6): 1035-1050 (2017) - 2014
- [j4]Ullrich R. Pfeiffer
, Yan Zhao, Janusz Grzyb, Richard Al Hadi, Neelanjan Sarmah
, Wolfgang Forster, Holger Rücker, Bernd Heinemann:
A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications. IEEE J. Solid State Circuits 49(12): 2938-2950 (2014) - 2011
- [j3]Jin-Sung Youn, Myung-Jae Lee, Kang-Yeob Park, Holger Rücker, Woo-Young Choi:
A bandwidth adjustable integrated optical receiver with an on-chip silicon avalanche photodetector. IEICE Electron. Express 8(7): 404-409 (2011) - 2010
- [j2]Jin-Sung Youn, Myung-Jae Lee, Kang-Yeob Park, Holger Rücker, Woo-Young Choi:
7-Gb/s monolithic photoreceiver fabricated with 0.25-µm SiGe BiCMOS technology. IEICE Electron. Express 7(9): 659-665 (2010) - [j1]Holger Rücker, Bernd Heinemann, Wolfgang Winkler, Rainer Barth, Johannes Borngräber, Jürgen Drews, Gerhard G. Fischer, Alexander Fox, Thomas Grabolla, Ulrich Haak, Dieter Knoll, Falk Korndörfer, Andreas Mai
, Steffen Marschmeyer, Peter Schley, Detlef Schmidt, J. Schmidt, Markus Andreas Schubert, K. Schulz, Bernd Tillack, Dirk Wolansky, Yuji Yamamoto
:
A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps. IEEE J. Solid State Circuits 45(9): 1678-1686 (2010)
Conference and Workshop Papers
- 2022
- [c12]Florian Vogelsang, Christian Bredendiek, Jan Schopfel, Holger Rücker, Nils Pohl:
A Static Frequency Divider up to 163 GHz in SiGe-BiCMOS Technology. BCICTS 2022: 49-52 - 2021
- [c11]Sébastien Fregonese, Chhandak Mukherjee, Holger Rücker, Pascal Chevalier, Gerhard Fischer, Didier Céli, Marina Deng
, Marine Couret
, François Marc, Cristell Maneux, Thomas Zimmer:
Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance. BCICTS 2021: 1-7 - [c10]Tobias Tannert, Markus Grözing, Manfred Berroth, Christian Schmidt
, Jung Han Choi, Christoph Caspar, Jonathan Schostak, Volker Jungnickel, Ronald Freund, Holger Rücker:
Analog 2: 1 Multiplexer with over 110 GHz Bandwidth in SiGe BiCMOS Technology. BCICTS 2021: 1-4 - [c9]Thomas Bücher, Janusz Grzyb, Philipp Hillger, Holger Rücker, Bernd Heinemann, Ullrich R. Pfeiffer:
A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications. ESSCIRC 2021: 369-372 - 2020
- [c8]Florian Vogelsang, David Starke
, Jonathan Wittemeier
, Holger Rücker, Nils Pohl
:
A Highly-Efficient 120 GHz and 240 GHz Signal Source in A SiGe-Technology. BCICTS 2020: 1-4 - 2019
- [c7]Holger Rücker, Bernd Heinemann:
Device Architectures for High-speed SiGe HBTs. BCICTS 2019: 1-7 - 2018
- [c6]Pascal Chevalier, Wolfgang Liebl, Holger Rücker, Alexis Gauthier, Dirk Manger, Bernd Heinemann, Grégory Avenier, Josef Böck:
SiGe BiCMOS Current Status and Future Trends in Europe. BCICTS 2018: 64-71 - 2014
- [c5]Ullrich R. Pfeiffer
, Yan Zhao, Janus Grzyb, Richard Al Hadi, Neelanjan Sarmah
, Wolfgang Forster, Holger Rücker, Bernd Heinemann:
14.5 A 0.53THz reconfigurable source array with up to 1mW radiated power for terahertz imaging applications in 0.13μm SiGe BiCMOS. ISSCC 2014: 256-257 - 2012
- [c4]Andreas Mai
, Holger Rücker:
Complementary RF-LDMOS transistors realized with standard CMOS implantations. ESSDERC 2012: 181-184 - [c3]Jeong-Min Lee, Woo-Young Choi, Holger Rücker:
60-GHz voltage-controlled oscillator and frequency divider in 0.25-µm SiGe BiCMOS technology. ISOCC 2012: 65-67 - [c2]Holger Rücker, Bernd Heinemann:
SiGe BiCMOS technology for mm-wave systems. ISOCC 2012: 266-268 - 2009
- [c1]Wolfgang Winkler, Wojciech Debski, Bernd Heinemann, Falk Korndörfer, Holger Rücker, Klaus Schmalz, Christoph Scheytt, Bernd Tillack:
122 GHz low-noise-amplifier in sige technology. ESSCIRC 2009: 316-319
Coauthor Index
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