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"Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz ..."

Pascal Chevalier et al. (2017)

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DOI: 10.1109/JPROC.2017.2669087

access: closed

type: Journal Article

metadata version: 2022-10-02

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Pascal Chevalier, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Böck, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, Christoph Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer:
Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proc. IEEE 105(6): 1035-1050 (2017)

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