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Publication search results
found 302 matches
- 2005
- Dolphin Abessolo-Bidzo, Patrick Poirier, Philippe Descamps, Bernadette Domengès:
Isolating failing sites in IC packages using time domain reflectometry: Case studies. Microelectron. Reliab. 45(9-11): 1639-1644 (2005) - P. C. Adell, Ronald D. Schrimpf, C. R. Cirba, W. T. Holman, X. Zhu, Hugh J. Barnaby, O. Mion:
Single event transient effects in a voltage reference. Microelectron. Reliab. 45(2): 355-359 (2005) - Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich:
Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale. Microelectron. Reliab. 45(9-11): 1390-1393 (2005) - Muhammad Ashraful Alam, S. Mahapatra:
A comprehensive model of PMOS NBTI degradation. Microelectron. Reliab. 45(1): 71-81 (2005) - Hideki Aono, Eiichi Murakami, Kousuke Okuyama, A. Nishida, Masataka Minami, Y. Ooji, Katsuhiko Kubota:
Modeling of NBTI saturation effect and its impact on electric field dependence of the lifetime. Microelectron. Reliab. 45(7-8): 1109-1114 (2005) - Elena Atanassova, Raisa V. Konakova, Vadym Fedorovych Mitin, J. Koprinarova, O. S. Lytvym, O. B. Okhrimenko, V. V. Schinkarenko, D. Virovska:
Effect of microwave radiation on the properties of Ta2O5-Si microstructures. Microelectron. Reliab. 45(1): 123-135 (2005) - Florence Azaïs, B. Caillard, S. Dournelle, P. Salomé, Pascal Nouet:
A new multi-finger SCR-based structure for efficient on-chip ESD protection. Microelectron. Reliab. 45(2): 233-243 (2005) - Stephane Azzopardi, A. Benmansour, M. Ishiko, Eric Woirgard:
Assessment of the Trench IGBT reliability: low temperature experimental characterization. Microelectron. Reliab. 45(9-11): 1700-1705 (2005) - Nicolas Baboux, Carole Plossu, Philippe Boivin:
Dynamic Fowler-Nordheim injection in EEPROM tunnel oxides at realistic time scales. Microelectron. Reliab. 45(5-6): 911-914 (2005) - S. Barberan, E. Auvray:
Die repackaging for failure analysis. Microelectron. Reliab. 45(9-11): 1576-1580 (2005) - S. Bargstädt-Franke, Wolfgang Stadler, Kai Esmark, Martin Streibl, Krzysztof Domanski, Horst A. Gieser, Heinrich Wolf, Waclaw Bala:
Transient latch-up: experimental analysis and device simulation. Microelectron. Reliab. 45(2): 297-304 (2005) - Giacomo Barletta, Giuseppe Currò:
Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS. Microelectron. Reliab. 45(5-6): 994-999 (2005) - D. Bauza, F. Rahmoune, R. Laqli, Gérard Ghibaudo:
On the SILC mechanism in MOSFET's with ultrathin oxides. Microelectron. Reliab. 45(5-6): 849-852 (2005) - Felix Beaudoin, Kevin Sanchez, Romain Desplats, Philippe Perdu, Jean Marc Nicot, J. P. Roux, M. Otte:
Dynamic Laser Stimulation Case Studies. Microelectron. Reliab. 45(9-11): 1538-1543 (2005) - S. Beckx, M. Demand, S. Locorotondo, K. Henson, M. Claes, V. Paraschiv, D. Shamiryan, P. Jaenen, W. Boullart, S. Degendt:
Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development. Microelectron. Reliab. 45(5-6): 1007-1011 (2005) - Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon:
Comparative analysis of accelerated ageing effects on power RF LDMOS reliability. Microelectron. Reliab. 45(9-11): 1732-1737 (2005) - Darko Belavic, Marko Hrovat, Jaroslaw Kita, Janez Holc, Jena Cilensek, Leszek J. Golonka, Andrzej Dziedzic:
Evaluation of compatibility of thick-film PTC thermistors and LTCC structures. Microelectron. Reliab. 45(12): 1924-1929 (2005) - Vitezslav Benda:
A note on trap recombination in high voltage device structures. Microelectron. Reliab. 45(2): 397-401 (2005) - P. Benoit, Jérémy Raoult, C. Delseny, Fabien Pascal, L. Snadny, J. C. Vildeuil, M. Marin, B. Martinet, D. Cottin, Olivier Noblanc:
Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 mum CMOS bipolar transistors. Microelectron. Reliab. 45(9-11): 1800-1806 (2005) - X. Blasco, Montserrat Nafría, Xavier Aymerich, J. Pétry, Wilfried Vandervorst:
Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM. Microelectron. Reliab. 45(5-6): 811-814 (2005) - Gianluca Boselli, Charvaka Duvvury:
Trends and challenges to ESD and Latch-up designs for nanometer CMOS technologies. Microelectron. Reliab. 45(9-11): 1406-1414 (2005) - Sanjib Kumar Brahma, Christian Boit, Arkadiusz Glowacki:
Seebeck Effect Detection on Biased Device without OBIRCH Distortion Using FET Readout. Microelectron. Reliab. 45(9-11): 1487-1492 (2005) - Tanja Braun, Karl-Friedrich Becker, Mathias Koch, Volker Bader, Rolf Aschenbrenner, Herbert Reichl:
Reliability Potential Of Epoxy Based Encapsulants For Automotive Applications. Microelectron. Reliab. 45(9-11): 1672-1675 (2005) - Alain Bravaix, Didier Goguenheim, M. Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent:
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. Microelectron. Reliab. 45(9-11): 1370-1375 (2005) - Peter Breitschopf, Guenther Benstetter, Bernhard Knoll, Werner Frammelsberger:
Intermittent contact scanning capacitance microscopy-An improved method for 2D doping profiling. Microelectron. Reliab. 45(9-11): 1568-1571 (2005) - Danick Briand, Felix Beaudoin, Jérôme Courbat, Nico F. de Rooij, Romain Desplats, Philippe Perdu:
Failure analysis of micro-heating elements suspended on thin membranes. Microelectron. Reliab. 45(9-11): 1786-1789 (2005) - Douglas Brisbin, Andy Strachan, Prasad Chaparala:
Optimizing the hot carrier reliability of N-LDMOS transistor arrays. Microelectron. Reliab. 45(7-8): 1021-1032 (2005) - Tomasz Brozek:
Editorial. Microelectron. Reliab. 45(1): 1-2 (2005) - Joachim N. Burghartz:
Review of add-on process modules for high-frequency silicon technology. Microelectron. Reliab. 45(3-4): 409-418 (2005) - Giovanni Busatto, Alberto Porzio, Francesco Velardi, Francesco Iannuzzo, Annunziata Sanseverino, Giuseppe Currò:
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. Microelectron. Reliab. 45(9-11): 1711-1716 (2005)
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