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"3D Modelling of Fluctuation Effects in Highly Scaled VLSI Devices."

Thomas D. Linton Jr., Shaofeng Yu, Reaz Shaheed (2001)

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DOI: 10.1155/2001/43502

access: open

type: Journal Article

metadata version: 2023-05-08

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  - https://dblp.org/rec/journals/vlsi/LintonYS01
Thomas D. Linton Jr., Shaofeng Yu, Reaz Shaheed:
3D Modelling of Fluctuation Effects in Highly Scaled VLSI Devices. VLSI Design 13(1-4): 103-109 (2001)

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