"Strain-Dependence of Electron Transport in Bulk Si and Deep-Submicron MOSFETs."

Fabian M. Bufler, P. Douglas Yoder, Wolfgang Fichtner (2001)

> Home

Details and statistics

DOI: 10.1155/2001/17268

access: open

type: Journal Article

metadata version: 2024-05-29

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/vlsi/BuflerYF01
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/vlsi/BuflerYF01
Fabian M. Bufler, P. Douglas Yoder, Wolfgang Fichtner:
Strain-Dependence of Electron Transport in Bulk Si and Deep-Submicron MOSFETs. VLSI Design 13(1-4): 163-167 (2001)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.