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"Energy-Efficient and Process-Variation-Resilient Write Circuit Schemes for ..."

Ramtin Zand, Arman Roohi, Ronald F. DeMara (2017)

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DOI: 10.1109/TVLSI.2017.2699579

access: closed

type: Journal Article

metadata version: 2020-03-11

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  persistent URL:
  - https://dblp.org/rec/journals/tvlsi/ZandRD17
Ramtin Zand, Arman Roohi, Ronald F. DeMara:
Energy-Efficient and Process-Variation-Resilient Write Circuit Schemes for Spin Hall Effect MRAM Device. IEEE Trans. Very Large Scale Integr. Syst. 25(9): 2394-2401 (2017)

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