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"Increase in Read Noise Margin of Single-Bit-Line SRAM Using Adiabatic ..."

Shunji Nakata et al. (2014)

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DOI: 10.1109/TVLSI.2013.2247642

access: closed

type: Journal Article

metadata version: 2020-03-11

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Shunji Nakata, Hiroki Hanazono, Hiroshi Makino, Hiroki Morimura, Masayuki Miyama, Yoshio Matsuda:
Increase in Read Noise Margin of Single-Bit-Line SRAM Using Adiabatic Change of Word Line Voltage. IEEE Trans. Very Large Scale Integr. Syst. 22(3): 686-690 (2014)

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