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"A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching ..."

Valerio Milo et al. (2018)

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DOI: 10.1109/TVLSI.2018.2818978

access: open

type: Journal Article

metadata version: 2020-03-11

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  - https://dblp.org/rec/journals/tvlsi/MiloPCCRAI18
Valerio Milo, Giacomo Pedretti, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Stefano Ambrogio, Daniele Ielmini:
A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP). IEEE Trans. Very Large Scale Integr. Syst. 26(12): 2806-2815 (2018)

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