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"High-temperature RF probe station for device characterization through ..."

Zachary D. Schwartz et al. (2005)

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DOI: 10.1109/TIM.2004.838137

access: closed

type: Journal Article

metadata version: 2020-06-08

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Zachary D. Schwartz, Alan N. Downey, Samuel A. Alterovitz, George E. Ponchak:
High-temperature RF probe station for device characterization through 500°C and 50 GHz. IEEE Trans. Instrum. Meas. 54(1): 369-376 (2005)

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