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"A 400-V Half Bridge Gate Driver for Normally-Off GaN HEMTs With Effective ..."

Siyuan Yu et al. (2023)

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DOI: 10.1109/TIE.2022.3153808

access: closed

type: Journal Article

metadata version: 2022-09-10

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  - https://dblp.org/rec/journals/tie/YuZSWZZSZHL23
Siyuan Yu, Qi Zhou, Gang Shi, Tianyang Wu, Jing Zhu, Long Zhang, Weifeng Sun, Sen Zhang, Nailong He, Ye Li:
A 400-V Half Bridge Gate Driver for Normally-Off GaN HEMTs With Effective Dv/Dt Control and High Dv/Dt Immunity. IEEE Trans. Ind. Electron. 70(1): 741-751 (2023)

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