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"In situ Degradation Monitoring of SiC MOSFET Based on Switching Transient ..."

Shi Pu et al. (2020)

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DOI: 10.1109/TIE.2019.2924600

access: closed

type: Journal Article

metadata version: 2020-05-22

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Shi Pu, Enes Ugur, Fei Yang, Bilal Akin:
In situ Degradation Monitoring of SiC MOSFET Based on Switching Transient Measurement. IEEE Trans. Ind. Electron. 67(6): 5092-5100 (2020)

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