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"Predicting SiC MOSFET Behavior Under Hard-Switching, Soft-Switching, and ..."

Md Rishad Ahmed, Rebecca Todd, Andrew J. Forsyth (2017)

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DOI: 10.1109/TIE.2017.2721882

access: open

type: Journal Article

metadata version: 2020-10-26

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  - https://dblp.org/rec/journals/tie/AhmedTF17
Md Rishad Ahmed, Rebecca Todd, Andrew J. Forsyth:
Predicting SiC MOSFET Behavior Under Hard-Switching, Soft-Switching, and False Turn-On Conditions. IEEE Trans. Ind. Electron. 64(11): 9001-9011 (2017)

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