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"Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise ..."
Zhiting Lin et al. (2021)
- Zhiting Lin
, Luanyun Li
, Xiulong Wu
, Chunyu Peng
, Wenjuan Lu, Qiang Zhao:
Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise Margin and Low Power Consumption. IEEE Trans. Circuits Syst. II Express Briefs 68(7): 2628-2632 (2021)
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