"Design Techniques for a 30-ns Access Time 1.5-V 200-KB Embedded EEPROM Memory."

Yiran Xu et al. (2016)

> Home

Details and statistics

DOI: 10.1109/TCSII.2016.2548238

access: closed

type: Journal Article

metadata version: 2020-05-27

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/tcas/XuHXYK16
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/tcas/XuHXYK16
Yiran Xu, Jian Hu, Jun Xiao, Guangjun Yang, Weiran Kong:
Design Techniques for a 30-ns Access Time 1.5-V 200-KB Embedded EEPROM Memory. IEEE Trans. Circuits Syst. II Express Briefs 63-II(11): 1064-1068 (2016)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.