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"The Design and Characterization of a Half-Volt 32 nm Dual-Read 6T SRAM."

Jente B. Kuang et al. (2011)

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DOI: 10.1109/TCSI.2011.2162459

access: closed

type: Journal Article

metadata version: 2020-05-22

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  - https://dblp.org/rec/journals/tcas/KuangSGWFSNN11
Jente B. Kuang, Jeremy D. Schaub, Fadi H. Gebara, Dieter F. Wendel, Thomas Fröhnel, Sudesh Saroop, Sani R. Nassif, Kevin J. Nowka:
The Design and Characterization of a Half-Volt 32 nm Dual-Read 6T SRAM. IEEE Trans. Circuits Syst. I Regul. Pap. 58-I(9): 2010-2016 (2011)

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