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"Intersubband Transition-Based Processes and Devices in AlN/GaN-Based ..."

Daniel Hofstetter et al. (2010)

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DOI: 10.1109/JPROC.2009.2035465

access: closed

type: Journal Article

metadata version: 2023-09-30

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  - https://dblp.org/rec/journals/pieee/HofstetterBGTWSDGERKGM10
Daniel Hofstetter, Esther Baumann, Fabrizio Raphael Giorgetta, Ricardo Théron, Hong Wu, William J. Schaff, Jahan Dawlaty, Paul A. George, Lester F. Eastman, Farhan Rana, Prem K. Kandaswamy, Fabien Guillot, Eva Monroy:
Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures. Proc. IEEE 98(7): 1234-1248 (2010)

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