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"Two- and three-terminal HfO2-based multilevel resistive memories for ..."

Heebum Kang et al. (2021)

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DOI: 10.1088/2634-4386/AC29CA

access: open

type: Journal Article

metadata version: 2021-12-15

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  dblp key:
  - journals/neuromorphic/KangPLKJAW21
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  - https://dblp.org/rec/journals/neuromorphic/KangPLKJAW21
Heebum Kang, Jinah Park, Dokyung Lee, Hyun Wook Kim, Sol Jin, Minjoon Ahn, Jiyong Woo:
Two- and three-terminal HfO2-based multilevel resistive memories for neuromorphic analog synaptic elements. Neuromorph. Comput. Eng. 1(2): 21001 (2021)

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