"New structure with SiO2-gate-dielectric select gates in ..."

Bo Wang et al. (2017)

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DOI: 10.1016/J.MICROREL.2017.08.001

access: closed

type: Journal Article

metadata version: 2022-10-21

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Bo Wang, Bin Gao, Huaqiang Wu, He Qian:
New structure with SiO₂-gate-dielectric select gates in vertical-channel three-dimensional (3D) NAND flash memory. Microelectron. Reliab. 78: 80-84 (2017)

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