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"Non-homogenous gamma process: Application to SiC MOSFET threshold voltage ..."

Thomas Santini et al. (2017)

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DOI: 10.1016/J.MICROREL.2017.06.007

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - https://dblp.org/rec/journals/mr/SantiniMFMGA17
Thomas Santini, Sébastien Morand, Mitra Fouladirad, Florent Miller, Antoine Grall, Bruno Allard:
Non-homogenous gamma process: Application to SiC MOSFET threshold voltage instability. Microelectron. Reliab. 75: 14-19 (2017)

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