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"Mixture of negative bias temperature instability and hot-carrier driven ..."

Gunnar Andreas Rott et al. (2014)

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DOI: 10.1016/J.MICROREL.2014.07.040

access: closed

type: Journal Article

metadata version: 2020-02-22

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Gunnar Andreas Rott, Karina Rott, Hans Reisinger, Wolfgang Gustin, Tibor Grasser:
Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors. Microelectron. Reliab. 54(9-10): 2310-2314 (2014)

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